Light emitting device module and display apparatus having the same

ABSTRACT

A light emitting device module includes a substrate, a plurality of light emitting devices disposed on the substrate, and an adhesive layer disposed between the substrate and at least one of the plurality of light emitting devices. An outer electrode is disposed on the outer region of the substrate.

CROSS-REFERENCE OF RELATED APPLICATIONS AND PRIORITY

The Present Application is a continuation of U.S. patent applicationSer. No. 17/335,788 filed on Jun. 1, 2021, which is a non-provisionalapplication which claims priority to and the benefit of U.S. ProvisionalApplication Nos. 63/033,912 filed Jun. 3, 2020 and 63/178,210 filed Apr.22, 2021, the disclosure of each of which is incorporated by referencein their entirety.

TECHNICAL FIELD

Exemplary embodiments relate to a light emitting device module and adisplay apparatus having the same.

BACKGROUND

Light emitting devices are semiconductor devices using light emittingdiodes which are inorganic light sources, they are used in varioustechnical fields such as display apparatuses, automobile lamps, generallighting, and the like, and these light emitting diodes have advantagessuch as longer lifespan, lower power consumption, and quicker responsethan conventional light sources, and thus, the light emitting diodeshave been replacing the conventional light sources.

The conventional light emitting diodes have been generally used asbacklight light sources in display apparatuses. However, displayapparatuses that directly realize images using the light emitting diodeshave been recently developed. Such displays are also referred to asmicro LED displays.

In general, the display apparatus displays various colors throughmixture of blue, green, and red light. In order to realize variousimages, the display apparatus includes a plurality of pixels, eachincluding blue, green, and red sub-pixels. As such, a color of a certainpixel is typically determined based on colors of the sub-pixels, andimages can be realized through a combination of such pixels.

In a case of the micro LED display, micro LEDs are arranged on a planecorresponding to each sub-pixel, and a large number of micro LEDs aremounted on one substrate. However, the micro LEDs have a very small sizeof 200 μm or less, further 100 μm or less, and various drawbacks intransferring the micro LEDs to a circuit board may occur.

SUMMARY

Exemplary embodiments provide a light emitting device module thatfacilitates transferring a light emitting device onto a substrate, and adisplay apparatus including the same.

A light emitting device module according to an exemplary embodiment mayinclude a substrate, a plurality of light emitting devices mounted onthe substrate, an adhesive layer interposed between the substrate andthe light emitting device, and bonding wires electrically connecting theplurality of light emitting devices, in which the substrate may includean outer electrode in at least a partial region, and the adhesive layermay have a non-conductive material.

In at least one variant, the substrate may be formed of a non-conductivematerial.

In another variant, the light emitting devices may emit light ofdifferent wavelengths from one another. The light emitting devices mayemit blue light, green light, or red light.

In further another variant, the light emitting device may include afirst LED stack, a second LED stack, and a third LED stack, in which thefirst, second, and third LED stacks may emit red light, blue light, andgreen light, respectively.

In at least one variant, the substrate may include at least four outerelectrodes.

In another variant, the light emitting devices may be arranged in amatrix form on the substrate.

In further another variant, the light emitting devices may be arrangedin a zigzag form on the substrate.

In another variant, the bonding wire may electrically connect the lightemitting device and the outer electrode. The bonding wire may be formedof a metallic material.

In further another variant, the substrate may include at least two outerelectrodes. The outer electrode may include a first outer electrode anda second outer electrode, in which the first outer electrode may bedisposed adjacent to and parallel to one side surface of the substrate,and the second outer electrode may face the first outer electrode and bedisposed adjacent to another side surface of the substrate.

In another variant, the outer electrode may be formed passing throughthe substrate. In further another variant, the outer electrode may beformed to cover a side surface of the substrate.

In another variant, the light emitting device module may further includea molding layer formed to surround the light emitting devices.

A display apparatus according to an exemplary embodiment may include apanel substrate, and a plurality of light emitting device modulesarranged on the panel substrate. Each of the light emitting devicemodules may include a substrate, a plurality of light emitting devicesmounted on the substrate, an adhesive layer interposed between thesubstrate and the light emitting device, and bonding wires electricallyconnecting the plurality of light emitting devices. The substrate mayinclude an outer electrode in at least a partial region, and theadhesive layer may have a first non-conductive material.

In at least one variant, the substrate may be formed of a secondnon-conductive material.

In another variant, the bonding wire may electrically connect one ormore light emitting devices and the outer electrode.

In further another variant, the bonding wire may be formed of aconductive material.

In another variant, the light emitting device module may include atleast two outer electrodes on the substrate.

According to exemplary embodiments of the present disclosure, it ispossible to provide a light emitting device module that facilitatestransferring a light emitting device onto a substrate, and a displayapparatus including the same.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic plan view illustrating a display apparatusaccording to an exemplary embodiment.

FIG. 1B is a schematic cross-sectional view taken along line A-A′ ofFIG. 1A.

FIG. 2A is a schematic plan view illustrating a light emitting devicemodule according to an exemplary embodiment.

FIG. 2B is a schematic cross-sectional view taken along line B-B′ ofFIG. 2A.

FIG. 2C is a schematic cross-sectional view illustrating one lightemitting device according to an exemplary embodiment.

FIG. 2D is a schematic cross-sectional view illustrating one lightemitting device according to another exemplary embodiment.

FIG. 2E is a schematic cross-sectional view illustrating one lightemitting device according to further another exemplary embodiment.

FIG. 3 is a schematic plan view illustrating a light emitting devicemodule according to another exemplary embodiment.

FIG. 4 is a schematic plan view illustrating a light emitting devicemodule according to another exemplary embodiment.

FIG. 5A is a schematic plan view illustrating a light emitting devicemodule according to another exemplary embodiment.

FIG. 5B is a schematic cross-sectional view taken along line C-C′ ofFIG. 5A.

FIG. 6A is a schematic cross-sectional view illustrating a lightemitting device module according to another exemplary embodiment.

FIG. 6B is a schematic cross-sectional view illustrating a displayapparatus according to another exemplary embodiment.

DETAILED DESCRIPTION

Hereinafter, embodiments will be described in detail with reference tothe accompanying drawings. The following embodiments are provided by wayof example so as to fully convey the spirit of the present disclosure tothose skilled in the art to which the present disclosure pertains.Accordingly, the present disclosure is not limited to the embodimentsdisclosed herein and can also be implemented in different forms. In thedrawings, widths, lengths, thicknesses, and the like of elements can beexaggerated for clarity and descriptive purposes. When an element orlayer is referred to as being “disposed above” or “disposed on” anotherelement or layer, it can be directly “disposed above” or “disposed on”the other element or layer or intervening elements or layers can bepresent. Throughout the specification, like reference numerals denotelike elements having the same or similar functions.

FIGS. 1A and 1B are a plan view and a cross-sectional view of a displayapparatus 1000, respectively, which illustrate a state in which aplurality of light emitting devices 10 is arranged in a matrix formaccording to an exemplary embodiment.

Referring to FIGS. 1A and 1B, the display apparatus 1000 includes apanel substrate 1100 and a plurality of light emitting device modules100. The plurality of light emitting device modules 100 may include asubstrate 101, the plurality of light emitting devices 10 mounted on thesubstrate 101, and a molding layer 113.

In some forms, the panel substrate 1100 may be formed of a material suchas polyimide (PI), FR4, or glass, and may include a circuit for passivematrix driving or active matrix driving. According to an exemplaryembodiment, the panel substrate 1100 may include wirings and resistorstherein. In another exemplary embodiment, the panel substrate 1100 mayinclude wirings, transistors, and capacitors. In addition, the panelsubstrate 1100 may have pads 1110 electrically connected to a circuit onan upper surface thereof. A bonding agent 1120 may be interposed betweenthe pad 1110 on the upper surface of the panel substrate 1100 and thesubstrate 101, and the panel substrate 1100 and the substrate 101 may bebonded to each other by using the bonding agent 1120. The bonding agent1120 may be a solder ball, and the substrate 101 may be bonded through aball grid array (BGA). However, the inventive concepts are not limitedthereto, and may be connected by soldering, epoxy bonding, anisotropicconductive film (ACF) bonding, and the like.

Outer electrodes 103 a and 103 b may be bonded to the panel substrate1100 by the bonding agent 1120. More particularly, the pad 1110 on thepanel substrate 1100 and the first and second outer electrodes 103 a and103 b may be bonded in contact with the bonding agent 1120.

The plurality of light emitting device modules 100 may be arranged onthe panel substrate 1100. The plurality of light emitting device modules100 may be arranged in a matrix form on the panel substrate 1100. Theplurality of light emitting device modules 100 may be arranged in 3×3 asshown in FIG. 1A, but the inventive concepts are not limited thereto,and may be arranged in various matrices such as 2×2, 4×4, and 5×5 (n×m,n=1, 2, 3, 4, . . . , m=1, 2, 3, 4, . . . .

Each of the light emitting device modules 100 may include the substrate101 and the plurality of light emitting devices 10 arranged on thesubstrate 101. In addition, the light emitting device modules 100 mayfurther include a molding layer 113 disposed surrounding the pluralityof light emitting devices 10, as shown in FIG. 1B.

Hereinafter, each component of the display apparatus 1000 will bedescribed in detail in the order of the light emitting device module 100arranged in the display apparatus 1000 and the plurality of lightemitting devices 10 arranged in the light emitting device module 100.

FIG. 2A is a schematic plan view illustrating a single light emittingdevice module 100 according to an exemplary embodiment, FIG. 2B is aschematic cross-sectional view taken along line B-B′ of FIG. 2A, andFIG. 2C is a schematic cross-sectional view illustrating a single lightemitting device 10 according to an exemplary embodiment.

Referring to FIGS. 2A, 2B and 2C, each of the light emitting devicemodules 100 may include a substrate 101, outer electrodes 103 a and 103b, a plurality of light emitting devices 10 arranged on the substrate101, and an adhesive layer 111, a bonding wire W1 between the lightemitting devices 10, and a molding layer 113.

The substrate 101 may be a non-conductive substrate, and may be, forexample, a PET, glass substrate, quartz, polymer, silicon (Si), GaAs,and sapphire substrate. In addition, the substrate 101 may be a blacksubstrate 101 suitable for a display apparatus, but the inventiveconcepts are not limited thereto.

The substrate 101 may include the outer electrodes 103 a and 103 b at anedge of the substrate 101 to electrically connect the panel substrate1100 and the plurality of light emitting devices 10. In addition, theouter electrodes 103 a and 103 b may have pads exposed on a surfacethereof, and the outer electrodes 103 a and 103 b may include a viapassing through the substrate 101. However, the inventive concepts arenot limited thereto, and in another exemplary embodiment, the outerelectrodes 103 a and 103 b may be formed to cover a side surface of thesubstrate 101 in place of the via.

The outer electrodes 103 a and 103 b may be electrically connected tothe plurality of light emitting devices 10. More particularly, the outerelectrodes 103 a and 103 b may include a first outer electrode 103 a anda second outer electrode 103 b. The first outer electrode 103 a may beconnected to at least one electrode of the light emitting device 10, forexample, an anode electrode of the light emitting device 10. The secondouter electrode 103 b may be connected to at least one electrode of thelight emitting device 10, for example, a cathode electrode of the lightemitting device 10.

In an exemplary embodiment, the first outer electrode 103 a may bedisposed facing one side of the plurality of light emitting devices 10,and the second outer electrode 103 b may be disposed opposite to theouter electrode 103 a. In addition, the first and second outerelectrodes 103 a and 103 b may be disposed in parallel to one sidesurface and another side surface of the substrate 101, respectively, toform a lengthy square shape, but the inventive concepts are not limitedthereto, and the shape of the outer electrode may not be limited.

In an exemplary embodiment, it is described that the outer electrodes103 a and 103 b may include two, but the inventive concepts are notlimited thereto. In some exemplary embodiments, the outer electrodes maybe formed near four edges of the substrate 101, respectively, and mayinclude at least two or more outer electrodes.

The first and second outer electrodes 103 a and 103 b may be disposed tosupply power to the plurality of light emitting devices 10, and may beformed as a common anode electrode and a common cathode electrode to beelectrically interconnected with the plurality of light emitting devices10. For example, a single first outer electrode 103 a may be commonlyconnected to anode electrodes of the plurality of light emitting devices10, and a single second outer electrode 103 b may be commonly connectedto cathode electrodes of the plurality of light emitting devices 10.However, the inventive concepts are not limited thereto, and in anotherexemplary embodiment, the light emitting devices 10 may be individuallydriven by separately connecting the outer electrodes 103 a and 103 b foreach of the light emitting devices 10. In addition, the light emittingdevice module 100 may further include a control unit for controlling thelight emitting devices 10. The control unit may control driving of theplurality of light emitting devices 10.

The first and second outer electrodes 103 a and 103 b may be formed of aconductive material, and for example, may be formed of a metallicmaterial such as copper (Cu), gold (Au), silver (Ag), aluminum (Al),nickel (Ni), or the like.

The plurality of light emitting devices 10 may be arranged in 6×6 asshown in FIG. 2A, but the inventive concepts are not limited thereto,and in some exemplary embodiments, may be arranged in various matrices,or may be alternately arranged. The plurality of light emitting devices10 may include light emitting devices 10 arranged in 6×6 on a same planeon the substrate 101, but the inventive concepts are not limitedthereto. The plurality of light emitting devices 10 may include at leastthree light emitting devices 10.

Each of the plurality of light emitting devices 10 may emit red light,green light, and blue light. For example, the plurality of lightemitting devices 10 arranged in a first row may sequentially emit redlight, green light, and blue light, respectively, but the inventiveconcepts are not limited thereto. For example, the light emittingdevices in each row may emit light of the same color. For example, thelight emitting devices in the first row may emit red light, the lightemitting devices in the second row emit green light, and the lightemitting devices in the third row may emit blue light.

In another exemplary embodiment, the light emitting device 10 mayinclude a first LED stack, a second LED stack, and a third LED stack inwhich one pixel is stacked in a vertical direction, respectively.Accordingly, one light emitting device 10 may constitute one pixelcapable of emitting red light, green light, and blue light.

The light emitting device 10 may have a rectangular shape having a longaxis and a short axis in plan view. For example, a length of the longaxis may have a size of 100 μm or less, and a length of the short axismay have a size of 70 μm or less. The plurality of light emittingdevices 10 may have a substantially similar shape and size.

As shown in FIG. 2D, a light emitting structure, that is, a firstconductivity type semiconductor layer 21, an active layer 23, and asecond conductivity type semiconductor layer 25 may be grown on asubstrate. The substrate may be one of various substrates that are usedto grow semiconductors, such as a gallium nitride substrate, a GaAssubstrate, a Si substrate, a sapphire substrate, especially a patternedsapphire substrate. A growth substrate may be separated from thesemiconductor layers using a process such as a mechanical grinding, alaser lift off, a chemical lift off process, or the like. However, theinventive concepts are not limited thereto, and, in some exemplaryembodiments, a portion of the substrate may remain to constitute atleast a portion of the first conductivity type semiconductor layer 21.

In an exemplary embodiment, in a case of a light emitting device 10 aemitting red light, the semiconductor layers may include aluminumgallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminumgallium indium phosphide (AlGaInP), or gallium phosphide (GaP).

In a case of a light emitting device 10 b emitting green light, thesemiconductor layers may include indium gallium nitride (InGaN), galliumnitride (GaN), gallium phosphide (GaP), aluminum gallium indiumphosphide (AlGaInP), or aluminum gallium phosphide (AlGaP).

In an exemplary embodiment, in a case of a light emitting device 10 cemitting blue light, the semiconductor layers may include galliumnitride (GaN), indium gallium nitride (InGaN), or zinc selenide (ZnSe).

The first conductivity type and the second conductivity type haveopposite polarities, when the first conductivity type is an n-type, thesecond conductivity type becomes a p-type, or, when the firstconductivity type is a p-type, the second conductivity type becomes ann-type.

The first conductivity type semiconductor layer 21, the active layer 23,and the second conductivity type semiconductor layer 25 may be grown onthe substrate in a chamber using a known process such as metal organicchemical vapor deposition (MOCVD) process. In addition, the firstconductivity type semiconductor layer 21 includes n-type impurities(e.g., Si, Ge, and Sn), and the second conductivity type semiconductorlayer 25 includes p-type impurities (e.g., Mg, Sr, and Ba). In the caseof the light emitting device 10 b or 10 c emitting green or blue light,the first conductivity type semiconductor layer 21 may include GaN orAlGaN containing Si as a dopant, and the second conductivity typesemiconductor layer 25 may include GaN or AlGaN containing Mg as adopant.

Although the first conductivity type semiconductor layer 21 and thesecond conductivity type semiconductor layer 25 are shown as singlelayers in the drawings, these layers may be multiple layers, and mayalso include a superlattice layer. The active layer 23 may include asingle quantum well structure or a multiple quantum well structure, anda composition ratio of a compound semiconductor may be adjusted to emita desired wavelength. For example, the active layer 23 may emit bluelight, green light, red light, or ultraviolet light.

As shown in FIG. 2C, the second conductivity type semiconductor layer 25and the active layer 23 may have a mesa M structure and may be disposedon the first conductivity type semiconductor layer 21. The mesa M mayinclude the second conductivity type semiconductor layer 25 and theactive layer 23, and may include a portion of the first conductivitytype semiconductor layer 21 as shown in FIG. 2C. The mesa M may bedisposed on the portion of the first conductivity type semiconductorlayer 21, and an upper surface of the first conductivity typesemiconductor layer 21 may be exposed around the mesa M.

In the illustrated exemplary embodiment, the mesa M is formed to exposethe first conductivity type semiconductor layer 21 around it. In anotherexemplary embodiment, a through hole may be formed passing through themesa M to expose the first conductivity type semiconductor layer 21.

In an exemplary embodiment, the first conductivity type semiconductorlayer 21 may have a flat light exiting surface. In another exemplaryembodiment, the first conductivity type semiconductor layer 21 may havea concave-convex pattern by surface texturing on a side of the lightexiting surface. Surface texturing may be carried out, for example, bypatterning using a dry or wet etching process. For example, cone-shapedprotrusions may be formed on the light exiting surface of the firstconductivity type semiconductor layer 21, a height of the cone may beabout 2 μm to 3 μm, a distance between the cones may be about 1.5 μm to2 μm and a diameter of a bottom of the cone may be about 3 μm to 5 μm.The cone may also be truncated, in which an upper diameter of the conemay be about 2 μm to 3 μm.

By forming the concave-convex pattern on the surface of the firstconductivity type semiconductor layer 21, it is possible to increaselight extraction efficiency by reducing total internal reflection.Surface texturing may be carried out on the first conductivity typesemiconductor layers of all of the light emitting devices 10 (10 a, 10b, and 10 c), and accordingly, viewing angles of light emitted from thelight emitting devices 10 (10 a, 10 b, and 10 c) may be set to beuniform. However, the inventive concepts are not limited thereto, and atleast one of the light emitting devices 10 (10 a, 10 b, and 10 c) mayhave a flat surface without including the concave-convex pattern.

As shown in FIGS. 2C and 2D, an ohmic contact layer 27 is disposed onthe second conductivity type semiconductor layer 25 to be in ohmiccontact with the second conductivity type semiconductor layer 25. Theohmic contact layer 27 may be formed of a single layer or multiplelayers, and may be formed of a transparent conductive oxide layer or ametallic layer. For example, the transparent conductive oxide layer mayinclude ITO, ZnO, or the like, and the metallic layer may include ametal such as Al, Ti, Cr, Ni, Au, or the like and alloys thereof.

A first contact pad 53 is disposed on the exposed first conductivitytype semiconductor layer 21. The first contact pad 53 may be in ohmiccontact with the first conductivity type semiconductor layer 21. Forexample, the first contact pad 53 may be formed of an ohmic metal layerin ohmic contact with the first conductivity type semiconductor layer21. The ohmic metal layer of the first contact pad 53 may beappropriately selected depending on a semiconductor material of thefirst conductivity type semiconductor layer 21. The first contact pad 53may be omitted.

A second contact pad 55 may be disposed on the ohmic contact layer 27.The second contact pad 55 is electrically connected to the ohmic contactlayer 27. The second contact pad 55 may be omitted.

An insulation layer 59 covers the mesa M, the ohmic contact layer 27,the first contact pad 53, and the second contact pad 55. The insulationlayer 59 has openings 59 a and 59 b exposing the first and secondcontact pads 53 and 55. The insulation layer 59 may be formed as asingle layer or multiple layers.

A first electrode pad 61 and a second electrode pad 63 are disposed onthe insulation layer 59. The first electrode pad 61 may extend from anupper portion of the first contact pad 53 to an upper portion of themesa M, and the second electrode pad 63 may be disposed in an upperregion of the mesa M. The first electrode pad 61 may be connected to thefirst contact pad 53 through the opening 59 a, and the second electrodepad 63 may be electrically connected to the second contact pad 55. Thefirst electrode pad 61 may be directly in ohmic contact with the firstconductivity type semiconductor layer 21, and in this case, the firstcontact pad 53 may be omitted. In addition, when the second contact pad55 is omitted, the second electrode pad 63 may be directly connected tothe ohmic contact layer 27.

The first and/or second electrode pads 61 and 63 may be formed of asingle layer or a multilayer metal. As a material of the first and/orsecond electrode pads 61 and 63, metals such as Al, Ti, Cr, Ni, Au, orthe like and alloys thereof may be used. For example, the first andsecond electrode pads 61 and 63 may include a Ti layer or a Cr layer onan uppermost portion thereof and may include an Au layer thereunder.

Although the light emitting device 10 according to an exemplaryembodiment has been briefly described with FIG. 2C, the light emittingdevice 10 may further include a layer having an additional function inaddition to the above-described layer. For example, various layers suchas a reflection layer to reflect light, an additional insulation layerto insulate a particular element, and an anti-solder layer to preventdiffusion of solder may be further included.

In addition, the mesa may be formed in various shapes, and locations andshapes of the first and second electrode pads 61 and 63 may also bevariously modified. Moreover, the ohmic contact layer 27 may be omitted,and the second contact pad 55 or the second electrode pad 63 maydirectly contact the second conductivity type semiconductor layer 25.

In the illustrated exemplary embodiment, bonding wires W1 may be coupledto the first and second electrode pads 61 and 63. The bonding wires W1may be bonded to the first and second electrode pads 61 and 63 on a sideof the second conductivity type semiconductor layer 25. However, theinventive concepts are not limited thereto, and the bonding wires W1 maybe bonded on a side of the first conductivity type semiconductor layer21.

FIG. 2D is a schematic cross-sectional view illustrating a lightemitting device 10′ according to another exemplary embodiment.

Referring to FIG. 2D, the light emitting device 10′ includes a firstconductivity type semiconductor layer 21, an active layer 23, a secondconductivity type semiconductor layer 25, an ohmic contact layer 27, anda via 31. The first conductivity type semiconductor layer 21, the activelayer 23, and the second conductivity type semiconductor layer 25 may begrown on a growth substrate. The growth substrate may be removed fromthe first conductivity type semiconductor layer 21 using a techniquesuch as laser lift off, chemical lift off, or the like. Accordingly, anupper surface of the first conductivity type semiconductor layer 21 isexposed. The ohmic contact layer 27 may be disposed on the secondconductivity type semiconductor layer 25, and the via 31 electricallyconnected to the ohmic contact layer 2 may be formed through the firstconductivity type semiconductor layer 21, the active layer 23, and thesecond conductivity type semiconductor layer 25, The via 31 may beelectrically insulated from the first conductivity type semiconductor slayer 21 and the active layer 23, and an insulation layer may be formedin a via hole for this purpose.

Bonding wires W1 may be bonded to the first conductivity typesemiconductor layer 21 and the via 31 exposed by removal of the growthsubstrate. A first contact pad 53 or a first electrode pad 61 may beformed on the first conductivity type semiconductor layer 21 to connectthe bonding wires W1.

FIG. 2E is a schematic cross-sectional view illustrating a lightemitting device 10″ according to another exemplary embodiment. In theexemplary embodiment described with reference to FIG. 2D, the growthsubstrate is removed, but in this exemplary embodiment, a growthsubstrate 51 remains. Meanwhile, a via 35 may pass through the growthsubstrate 51 to be is electrically connected to a first conductivitytype semiconductor layer 21. Meanwhile, a side electrode 37 may beelectrically connected to an ohmic contact layer 27 along a side surfaceof the growth substrate 51. The side electrode 37 is electricallyinsulated from the first conductivity type semiconductor layer 21 and anactive layer 23, and for this purpose, an insulation layer may be formedalong the side surfaces of the growth substrate 51, the firstconductivity type semiconductor layer 21, and the active layer 23.Bonding wires W1 may be electrically connected to the first conductivitytype semiconductor layer 21 and a second conductivity type semiconductorlayer 25 on a side of the first conductivity type semiconductor layer 21through the via 35 and the side electrode 37.

Instead of the via 35, a side electrode electrically connected to thefirst conductivity type semiconductor layer 21 may be formed on the sidesurface of the growth substrate 51. In addition, instead of the sideelectrode 37, a via electrically connected to the ohmic contact layer 27may be formed through the growth substrate 51, the first conductivitytype semiconductor layer 21, the active layer 23, and the secondconductivity type semiconductor layer 25.

As shown in FIGS. 2A and 2B, the adhesive layer 111 may be interposedbetween the substrate 101 and the plurality of light emitting devices10. The light emitting devices 10 may be arranged on the substrate 101through the adhesive layer 111. The adhesive layer 111 may be formed tohave a width wider than those of the plurality of light emitting devices10 arranged on the upper surface of the substrate 101. In addition, theadhesive layer 111 may be spaced apart from the first and second outerelectrodes 103 a and 103 b.

The adhesive layer 111 may include a non-conductive material. Forexample, the non-conductive material may be an adhesive paste, anadhesive, a film, or the like. In the illustrated exemplary embodiment,the adhesive layer 111 is formed by coating a non-conductive adhesivepaste, but the inventive concepts are not limited thereto.

The bonding wires W1 may electrically connect the plurality of lightemitting devices 10. For example, the bonding wire W1 may connect ann-type electrode of the light emitting device 10 and a p-type electrodeof the light emitting device 10 adjacent to the light emitting device10. In this manner, the bonding wire W1 may electrically connect atleast two or more of the plurality of light emitting devices 10. Inaddition, the bonding wires W1 may be formed on the first and secondouter electrodes 103 a and 103 b for supplying power and on the lightemitting devices 10 adjacent to the first and second outer electrodes103 a and 103 b, respectively, to supply power. The bonding wires W1 maybe formed to have as short a length as possible between locations beingbonded, respectively, and thus, optical interference caused by thebonding wires W1 may be reduced or avoided.

The bonding wire W1 may be bonded by pressing the wire down from a topat the location where the wire is bonded. The bonding wire W1 mayinclude a conductive material, and may be formed of a metallic materialhaving favorable conductivity. For example, the bonding wire W1 may beformed of a single metal such as Au, Ag, Cu, or the like or an alloythereof.

Meanwhile, in the illustrated exemplary embodiment, the bonding wire W1is formed as a metal wiring for electrically connecting the plurality oflight emitting devices 10, but the inventive concepts are not limitedthereto, and may be formed through an air bridge process.

A molding layer 113 surrounding the plurality of light emitting devices10 may be disposed on the substrate 101. A side surface of the moldinglayer 113 may be formed on a same axis as a side surface of thesubstrate 101. Accordingly, a width of the molding layer 113 and that ofthe substrate 101 may be formed to be the same. The molding layer 113may be formed to cover the bonding wire W1 and may be formed higher thana maximum height of the bonding wire W1. As such, the molding layer 113may prevent the light emitting device 10 and the bonding wire W1 frombeing damaged by an external impact, and may prevent moisturepermeation, thereby improving reliability of the light emitting devicemodule 100.

In the present disclosure, the molding layer 113 is formed as a singlelayer, but the inventive concepts are not limited thereto, and may beformed as a plurality of layers. The molding layer 113 may include anacrylic resin, a silicone resin, or a urethane resin. The molding layer113 may further include a light absorbing agent or a dye. The moldinglayer 113 may be transparent, and may be black, white and gray. Forexample, when the molding layer 113 is formed of a black molding layer,a color difference due to the substrate 101 may be improved to improveuniformity of extracted light. In addition, since the molding layer 113surrounds the plurality of light emitting devices 10 and may block lightextracted to the side, a left and right viewing angle may be reduced,and it is possible to prevent a boundary line between adjacent pixelsfrom being visible. In addition, an additional molding layer may befurther included to prevent a boundary line between a plurality of lightemitting device modules disposed on the panel substrate 1100 from beingvisible.

In the following exemplary embodiments, differences from theabove-described exemplary embodiments will be mainly described in orderto avoid repeated descriptions, and the same components will be brieflydescribed or omitted.

FIG. 3 is a schematic plan view illustrating a light emitting devicemodule 200 according to another exemplary embodiment.

Referring to FIG. 3 , the light emitting device module 200 may be formedin the same manner as in FIG. 2A except for first and second outerelectrodes 203 a and 203 b.

In an exemplary embodiment of the present disclosure, light emittingdevices 20 may be arranged in a 6×6 matrix. The first and second outerelectrodes 203 a and 203 b may be spaced apart from the light emittingdevices 20 and formed to be in flush with the light emitting devices 20located at both ends of each row so as to supply power to the pluralityof light emitting devices 20. Accordingly, in the illustrated exemplaryembodiment, the first and second outer electrodes 203 a and 203 b mayinclude at least 12 outer electrodes. Specifically, the first outerelectrode 203 a may include six outer electrodes, and the second outerelectrode 203 b may also include six outer electrodes. However, theinventive concepts are not limited thereto, and the number andarrangement of the outer electrodes may be determined depending on anarrangement and use of the light emitting device 20.

In the illustrated exemplary embodiment, the light emitting devices 20arranged in a first row may emit red light, the light emitting devices20 arranged in a second row may emit green light, and the light emittingdevices 20 arranged in a third row may emit blue light, but theinventive concepts are not limited thereto.

FIG. 4 is a schematic plan view illustrating a light emitting devicemodule 300 according to another exemplary embodiment.

Referring to FIG. 4 , the light emitting device module 300 may be formedin the same manner as in FIG. 2A except for arrangements of lightemitting devices 30. A plurality of light emitting devices 30 may bearranged in 6 rows from one side of a substrate 301 to the opposite sidethereof, and the light emitting devices 30 in each two adjacent rows maybe arranged in a zigzag manner. The plurality of light emitting devices30 may be electrically connected through bonding wires W3, and thus, thearrangements of the plurality of light emitting devices 30 may not berestricted by electrical connection.

FIG. 5A and FIG. 5B are a schematic plan view and a schematiccross-sectional view illustrating a light emitting device module 400according to another exemplary embodiment, respectively.

Referring to FIGS. 5A and 5B, the light emitting device module 400 maybe formed in the same manner as in FIGS. 2A and 2B except for first,second, third, and fourth outer electrodes 403 a, 403 b, 403 c, and 403d and a light emitting device 40. The light emitting device module 400may include four light emitting devices 40 arranged on a substrate 401,and the first, second, third and fourth outer electrodes 403 a, 403 b,403 c, and 403 d may be disposed along four side surfaces of thesubstrate 401. The first, second, and, third outer electrodes 403 a, 403b, and 403 c may be formed at least as many as the number of the lightemitting devices 40, and the first, second, and third outer electrodes403 a, 403 b, and 403 c may be spaced apart from one another. In theillustrated exemplary embodiment, the first, second, and third outerelectrodes 403 a, 403 b, and 403 c may be formed at the same intervaland in the same shape, but the inventive concepts are not limitedthereto. The first, second, and third outer electrodes 403 a, 403 b, and403 c may be formed to have various intervals and shapes depending onarrangements of the light emitting devices 40.

An adhesive layer 411 may be interposed between the substrate 401 andthe plurality of light emitting devices 40.

Power may be supplied to the light emitting device 40 through the first,second, third, and fourth outer electrodes 403 a, 403 b, 403 c, and 403d. For example, the first, second, and third outer electrodes 403 a, 403b, and 403 c may be connected to a p-type semiconductor layer of eachLED stack of the light emitting device 40 by bonding wires W4, and thefourth outer electrode 403 d may be commonly connected to n-typesemiconductor layers of the four light emitting devices 40 to supplypower. The bonding wires W4 may be bonded in various directionsdepending on the arrangements of the first, second, third, and fourthouter electrodes 403 a, 403 b, 403 c, and 403 d and the light emittingdevice 40. For example, the light emitting device 40 may include a firstbump pad 40 a, a second bump pad 40 b, a third bump pad 40 c, and afourth bump pad 40 d. The first bump pad 40 a may be electricallyconnected to the first outer electrode 403 a, the second bump pad 40 bmay be electrically connected to the second outer electrode 403 b, andthe third bump pad 40 c may be electrically connected to the third outerelectrode 403 c. In addition, the fourth bump pad 40 d may beelectrically connected to the fourth bump pad 40 d of an adjacent lightemitting device, and finally connected to the fourth outer electrode 403d to receive power.

In the illustrated exemplary embodiment, the light emitting device 40includes four light emitting devices 40, but the inventive concepts arenot limited thereto, and may include at least one light emitting device40. In addition, the number of outer electrodes may be changed dependingon the number of the light emitting devices 40 disposed.

In some forms, the light emitting device 40 may include a first LEDstack, a second LED stack, and a third LED stack in which one pixel isstacked in a vertical direction. The first LED stack may emit lighthaving a longer wavelength than those of the second and third LEDstacks, and the second LED stack may emit light having a longerwavelength than that of the third LED stack. For example, the first LEDstack may emit blue light, the second LED stack may emit green light,and the third LED stack may emit red light.

The first bump pad 40 a, the second bump pad 40 b, the third bump pad 40c, and the fourth bump pad 40 d are electrically connected to the firstLED stack, the second LED stack, and the third LED.

FIG. 6A is a schematic cross-sectional view illustrating a lightemitting device module 500 according to another exemplary embodiment,and FIG. 6B is a schematic cross-sectional view illustrating a displayapparatus 2000 to which the light emitting device module 500 of FIG. 6Ais applied.

Referring to FIG. 6A, the light emitting device module 500 may be formedin the same manner as in FIG. 2B except for first and second outerelectrodes 503 a and 503 b. The first and second outer electrodes 503 aand 503 b may be formed to cover a side surface of a substrate 501. Morespecifically, the first and second outer electrodes 503 a and 503 b maybe formed on at least portions of upper and lower surfaces of thesubstrate 501, and may connect portions of the first and second outerelectrodes 503 a and 503 b formed on the upper and lower surfaces of thesubstrate 501 and be formed to cover side surfaces of the substrate 501.

An adhesive layer 511 may be interposed between the substrate 501 andthe plurality of light emitting devices 50.

In the illustrated exemplary embodiment, the first outer electrode 503 amay be connected to p-type semiconductor layers of the plurality oflight emitting devices 50 by bonding wires W5, and the second outerelectrode 503 b may be connected to n-type semiconductor layers thereof,but the inventive concepts are not limited thereto.

Referring to FIG. 6B, the light emitting device module 500 may be formedon a panel substrate 5100 in the same manner as in FIG. 1B. A bondingagent 5120 may be interposed between a pad 5110 on an upper surface ofthe panel substrate 5100 and the first and second outer electrodes 503 aand 503 b of the substrate 501, and the pad 5110 and the first andsecond outer electrodes 503 a and 503 b may be bonded by the bondingagent 5120. More particularly, the pads 5110 on the panel substrate 5100and the first and second outer electrodes 503 a and 503 b may be bondedin contact with the bonding agents 5120. The bonding agent 5120 may be asolder ball, and the substrate 501 may be bonded through a ball gridarray (BGA). However, the inventive concepts are not limited thereto,and may be connected by soldering, epoxy bonding, and anisotropicconductive film (ACF) bonding.

Although some exemplary embodiments have been described herein, itshould be understood that these exemplary embodiments are provided forillustration only and are not to be construed in any way as limiting thepresent disclosure. It should be understood that features or componentsof one exemplary embodiment can also be applied to other exemplaryembodiments without departing from the spirit and scope of the presentdisclosure.

What is claimed is:
 1. A light emitting device module, comprising: asubstrate comprising a mounting region and an outer region; a pluralityof light emitting devices disposed on the mounting region of thesubstrate; an adhesive layer disposed between the mounting region of thesubstrate and at least one of the light emitting devices, the adhesivelayer having a non-conductive material; a first outer electrode and asecond outer electrode disposed on the outer region of the substrate,the outer region being external to the mounting region of the substrate;and a bonding wire electrically connecting the at least one of theplurality of light emitting devices to one of the first or second outerelectrodes, wherein the first outer electrode is electrically connectedto cathode electrodes of the plurality of light emitting devices.
 2. Thelight emitting device module of claim 1, wherein the first outerelectrode is disposed facing one side of at least one of the pluralityof light emitting devices.
 3. The light emitting device module of claim1, wherein the first and second outer electrodes are disposed near edgesof the substrate.
 4. The light emitting device module of claim 1,further comprising a molding layer disposed on the substrate andcovering side surfaces of the plurality of light emitting devices. 5.The light emitting device module of claim 4, wherein a maximum height ofthe molding layer is greater than a maximum height of the bonding wire.6. The light emitting device module of claim 1, wherein the plurality oflight emitting devices emit blue light, green light, and red light,respectively.
 7. The light emitting device module of claim 1, whereinthe adhesive layer is formed to have a width wider than a width of theat least one of the plurality light emitting devices.
 8. The lightemitting device module of claim 1, wherein the adhesive layer is spacedapart from the first and second outer electrodes.
 9. The light emittingdevice module of claim 1, wherein the first and second outer electrodescover regions of side surfaces of the substrate.
 10. A light emittingdevice module, comprising: a substrate having a mounting region and anouter region; a plurality of light emitting devices disposed on themounting region of the substrate; at least one adhesive layer disposedbetween the mounting region of the substrate and at least one of theplurality of light emitting devices; a first outer electrode disposed onthe outer region of the substrate, the first outer electrode spacedapart from the mounting region of the substrate; a bonding wireelectrically connecting the at least one of the plurality of the lightemitting devices to the first outer electrode, and a molding layerdisposed on the substrate and covering side surfaces of the plurality ofthe light emitting devices, wherein a maximum height of the moldinglayer is greater than a maximum height of the bonding wire.
 11. Thelight emitting device module of claim 10, wherein the plurality of lightemitting devices emit blue light, green light, and red light,respectively.
 12. The light emitting device module of claim 10, whereinthe at least one adhesive layer is formed to have a width wider than awidth of the at least one of the plurality light emitting devices. 13.The light emitting device module of claim 10, further comprising asecond outer electrode disposed on the outer region of the substrate,the first outer electrode is electrically connected to cathodeelectrodes of the plurality of light emitting devices.
 14. The lightemitting device module of claim 13, wherein the first and second outerelectrodes are disposed near edges of the substrate.
 15. A displayapparatus, comprising: a panel substrate; and a light emitting devicemodule disposed on the panel substrate, the light emitting devicemodule, comprising: a substrate having a mounting region and an outerregion, wherein the substrate includes a non-conductive material; aplurality of light emitting devices disposed on the mounting region ofthe substrate; at least one adhesive layer disposed between the mountingregion of the substrate and at least one of the plurality of lightemitting devices; a first outer electrode and a second outer electrodedisposed on the outer region of the substrate, the outer region beingexternal to the mounting region of the substrate, and a molding layerdisposed on the substrate and covering side surfaces of the plurality ofthe light emitting devices and side surfaces of the first and secondouter electrodes, wherein the first outer electrode is electricallyconnected to cathode electrodes of the plurality of light emittingdevices.
 16. The display apparatus of claim 15, wherein the first outerelectrode is disposed facing one side of at least one of the pluralityof light emitting devices.
 17. The display apparatus of claim 15,wherein the first and second electrodes are disposed near edges of thesubstrate.
 18. The display apparatus of claim 15, wherein the pluralityof light emitting devices emit blue light, green light, and red light,respectively.
 19. The display apparatus of claim 15, wherein the atleast one adhesive layer is formed to have a width wider than a width ofthe at least one of the plurality light emitting devices.
 20. Thedisplay apparatus of claim 15, wherein the first and second outerelectrodes cover regions of side surfaces of the substrate.